New a-Si/c-Si and a-SiC/c-Si based optically controlled switching devices

Abstract

The fabrication and characteristics of Al/a-Si/c-Si(p)/c-Si(n+)/Al and Al/a-SiC/c-Si(p)/c-Si(n+)/Al switches are presented. Both switches use a non-hydrogenated amorphous thin film. The devices can be optically controlled, and exhibit forward breakover voltages (VBF) of 120-160 V. Their behaviour resembles that of a thyristor. A simple model for the device operation is also presented and discussed for the first time.