Fully Transparent Al-Doped ZnO Thin-Film Transistors on Flexible Plastic Substrates

Abstract

We have fabricated fully transparent Al-doped ZnO thin-film transistors (AZO TFTs) on a flexible plastic substrate at room temperature. A double-stacked channel structure composed of a high-density layer and a low-density layer is also investigated to improve the device performance. As-fabricated TFTs exhibit excellent electrical performance as well as optical performance, with a saturation mobility of 31.4 cm 2 V -1 s -1 , a drain current on/off ratio of about 10 8 , a subthreshold swing of 330 mV/dec, and an average transmittance in the visible wavelength range of above 70%.