Solid-State Color Image Sensor Using Hydrogenated Amorphous Silicon

Abstract

The device structure, fabrication and performance of a solid-state color image sensor using hydrogenated amorphous silicon as a photoconductive materal are reported in this paper. The number of photodiodes made of nitrogen doped amorphous silicon is 485 (V) × 384 (H), and they are scanned by n-MOS switches. An RGB color filter array is put on the chip to make a 2/3'' size single chip color sensor. This device features high spectral sensitivity, high blooming suppression, low lag and little burning.