Applied Physics Letters · 2012 · 15 citations · 22 references
EngineeringMaterials EngineeringMaterials ScienceNanomaterialsNanotechnologySurface ScienceIii-v SemiconductorsIon ImplantationNanostructured SurfacesSemiconductor SurfacesSurface ModificationSurface PhysicsIon Diffusion MechanismsIon Distribution Near InterfacesIon Implantation EffectsIon-surface InteractionsPassivation Mechanisms
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation M. Kang, J. H. Wu, S. Huang, M. V. Warren, Y. Jiang, E. A. Robb, R. S. Goldman; Universal mechanism for ion-induced nanostructure formation on III-V compound semiconductor surfaces. Appl. Phys. Lett. 20 August 2012; 101 (8): 082101. https://doi.org/10.1063/1.4742863 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
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