Theory of transport processes in single crystal growth from the melt

Abstract

Abstract The quality of large semiconductor crystals grown from the melt for use in electronic and optoelectronic devices is strongly influenced by the intricate coupling of heat and mass transfer and melt flow in growth systems. This paper reviews the present state of understanding of these processes starting from the simplest descriptions of solidification processes to detailed numerical calculations needed for quantitative modeling of processing with solidification. Descriptions of models for the vertical Bridgman‐Stockbarger and Czochralski crystal growth techniques are included as examples of the level of understanding of industrially important methods.