Optical quenching of photoconductivity in GaN photoconductors

Abstract

The observation of optical quenching of photoconductivity in GaN photoconductors at room temperature is reported on. Three prominent quenching bands were found at Ev+1.44, 1.58, and 2.20 eV, respectively. These levels are related to three hole traps in GaN materials based on a hole trap model to interpret the quenching mechanism. The responsivity was reduced about 12% with an additional He–Ne laser shining on the photoconductor.