Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition - Concepedia

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Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition

11

Citations

17

References

2006

Year

T.K. Kim, Sang Kyun Shim, Suk-Woo Yang, Jae-Kwon Son, Yongseok Hong, Guili Yang

Current Applied Physics

Wide-bandgap SemiconductorChemical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorOptoelectronicsCompound SemiconductorGrowth Parameters

References

	Year	Citations

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