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Dopant Distribution in Nominally Yttrium‐Doped Sapphire
68
Citations
2
References
1986
Year
Materials ScienceWide-bandgap SemiconductorEngineeringYttrium‐doped SapphirePhysicsCrystal Growth TechnologyApplied PhysicsCondensed Matter PhysicsSolid-state ChemistryDopant Distribution
The dopant distribution in nominally yttrium‐doped sapphire is characterized. The results indicate that virtually all of the intended dopant segregated to the surface of the crystal during growth. This implies that the solubility of yttrium in alumina is <10 ppm even at temperatures approaching the melting point of alumina.
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