Vertical polyelectrolyte-gated organic field-effect transistors

Abstract

Short-channel, vertically structured organic transistors with a polyelectrolyte as gate insulator are demonstrated. The devices are fabricated using low-resolution, self-aligned, and mask-free photolithography. Owing to the use of a polyelectrolyte, our vertical electrolyte-gated organic field-effect transistors (VEGOFETs), with channel lengths of 2.2 and 0.7 μm, operate at voltages below one volt. The VEGOFETs show clear saturation and switch on and off in 200 μs. A vertical geometry to achieve short-transistor channels and the use of an electrolyte makes these transistors promising candidates for printed logics and drivers with low operating voltage.