A Method of Designing a Field-Controlled Active Frequency Selective Surface

Abstract

Most conventional active frequency selective surfaces (AFSSs) are designed with a dc biasing circuit to allow the application of dc biasing voltage across any active component. An innovative method of designing AFSS is here described. It involves using an induced voltage across the surface loading components. This voltage serves as the biasing sign and facilitates control of FSS's transmission properties. The simulated results prove that a passband exists on the FSS at 3.3 GHz when it is exposed to a less intense electric field; when the electric field intensity (EFI) is higher than 70 V/m, the insertion loss of the electromagnetic wave (EMW) increases at 3.3 GHz. When the intensity of the incoming microwave field reaches 5000 V/m, the insertion loss can reach 23 dB. The results of the present experiment were consistent with those of simulations .