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Preparation of NbC/sub x/N/sub 1-x/ Josephson junctions with TiN/sub x/ barriers
23
Citations
10
References
1997
Year
EngineeringThin Film Process TechnologyJosephson JunctionsTunneling MicroscopySuperconductivityQuantum MaterialsThin Film ProcessingMaterials ScienceMaterials EngineeringPhysicsCrystalline DefectsTin/sub X/ BarriersPreparation ProcessMaterial AnalysisSurface ScienceApplied PhysicsCondensed Matter PhysicsTitanium Nitride FilmsThin FilmsChemical Vapor DepositionRf Sputtering
This paper presents the preparation process and the characteristics of titanium nitride films and nonhysteretic NbC<sub>x</sub>N<sub>1-x</sub>,/TiN<sub>x</sub>/NbC<sub>x</sub>N<sub>1-x</sub> SNS junctions using TiN<sub>x</sub> as the barrier material. Structural studies show that TiN<sub>x</sub> films prepared by rf sputtering at room temperature have a preferential orientation of TiN(111) phase, while those grown at higher substrate temperatures are (200)-oriented. Resistivilies of the TiN<sub>x</sub> films range from 4SμΩ·cm to 1lOμΩ·cm, depending on the values of N<sub>2</sub> partial pressure. Polycrystalline NbC<sub>x</sub>N<sub1-x</sub> films with high T<sub>c</sub> have been grown on TiN<sub>x</sub> films by rf sputtering. NbC<sub>N<sub>1-x</sub>/TiN<sub>x</sub>/NbC<sub>x</sub>N<sub>l-x</sub> trilayer junctions with various dimensions and TiN<sub>x</sub> thicknesses have been fabricated. Current-voltage characteristics of the junction with a 130nm-thick TIN<sub>x</sub> barrier show nonhysteiretic behavior and strong critical current modulatilon with applied magnetic field, suggesting the characteristics of a Josephson SNS large junction. The I<sub>c</sub>R<sub>N</sub> product and the critical current density J<sub>c</sub> of a 5μm x 5μm junction at 4.2K are estimated to be 30μV and 36kA/cm<sup>2</sup>, respectively.
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