Growth and optical studies of a GaAs epitaxial layer on porous Si(100) grown by molecular beam epitaxy - Concepedia

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Growth and optical studies of a GaAs epitaxial layer on porous Si(100) grown by molecular beam epitaxy

17

Citations

16

References

1992

Year

T. W. Kang, Y. T. Oh, J. Y. Leem, T. W. Kim

Journal of Materials Science Letters

Materials ScienceOptical MaterialsEngineeringApplied PhysicsGaas Epitaxial LayerPorous SiMolecular Beam EpitaxyEpitaxial GrowthOptoelectronicsCompound Semiconductor

References

	Year	Citations

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