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Supralinearity and sensitisation in LiF TLD phosphor
37
Citations
5
References
1974
Year
Ion ImplantationEngineeringPhysicsPost-irradiation AnnealingLuminescent GlassApplied PhysicsLuminescence CentresLif Tld PhosphorPhosphoreneLuminescence PropertyCrystallographyPhosphorescenceStandardizationOptoelectronics
New data on post-irradiation annealing of LiF TLD phosphor are presented. The results show a new peak at 400 degrees C and increased availability of luminescence centres that are responsible for the radiation-induced sensitisation. A model to explain the observed phenomena is presented. The new peak trap centres and the increase in luminescence centres are attributed to the breakup, on irradiation, of a complex centre. The complex centre itself is formed on annealing at 400 degrees C.
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