Effects of Grown-ln and Process-Induced Defects in Single Crystal Silicon

Abstract

Distributions of defects observed in single crystals of silicon grown from the melt are shown to be congruent with two well known growth inhomogeneities characterized either by a spiral ramp pattern or a faceted core pattern in the crystal. The consequences of these defects are traced through the oxidation of the substrate, as required for a subepitaxial diffusion, and (after removal of the oxide) the growth of an epitaxial layer. It will be shown that the defect distributions persist through these processes and, interacting with process induced defects, produce several characteristic distributions of stacking faults in the epitaxial layer.