Estimation of alloy scattering potential in ternaries from the study of two-dimensional electron transport

Abstract

A theory of alloy scattering of two-dimensional electron gas in ternary semiconductors is developed by assuming spherically symmetric square scattering potential, randomly distributed between two kinds of alloy sites. The theory predicts a temperature independent mobility, in agreement with the experimental results for In0.53Ga0.47As. The calculated value at 4.2 K comes close to the experimental value, in which the effect of impurity scattering has been reduced by using an undoped spacer layer. It is concluded that the study of two-dimensional transport in the devices may lead to a correct estimation of the alloy scattering potential.