Subpicosecond photoresponse of carriers in low-temperature molecular beam epitaxial In0.52Al0.48As/InP

Abstract

Femtosecond time-resolved reflectivity and photoconductive switching measurements have been made of In0.52Al0.48As grown by molecular beam epitaxy on (100) InP substrates at growth temperatures ranging from 150 to 480 °C. A response/switching time of ∼400 fs is measured in the sample grown at 150 °C. Temperature-dependent measurements shed light on the nature of the material producing the ultrafast response.