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Controlled growth of bulk bicrystals and the investigation of microstructure-property relations of YBa2Cu3O<i>x</i> grain boundaries
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1996
Year
EngineeringCrystal Growth TechnologyControlled GrowthEpitaxial GrowthCrystal FormationMaterials ScienceMicrostructure-property RelationsCrystalline DefectsCrystal MaterialGrain BoundaryBicrystal MisorientationCrystallographyMicrostructureMaterial AnalysisBulk BicrystalsApplied PhysicsCondensed Matter PhysicsThin FilmsGrain Boundary Plane
A new method to prepare bicrystals with well defined planar interfaces in YBa2Cu3Ox (Y123) has been developed. The bicrystal misorientation is controlled by dual seeding using Nd1+xBa2−xCu3Oy single crystals. The grain boundary plane orientation is influenced by the positioning of the seeds and by control of the temperature gradient. The macro-, meso-, and microscopic planarity of the grain boundaries has been established by optical and electron microscopy. In addition, a difference in critical current density between the low (≤10°) and the high (≥20°) misorientation angle regime of nearly two orders of magnitude has been established in a series of [001]-tilt grain boundaries. Thus, this type of grain boundary may allow a less ambiguous interpretation of the relationship between microstructure and transport properties than is possible from bicrystal thin film boundaries by eliminating the potential variations in properties associated with a varying grain boundary plane.