Characteristics of a high speed 1.22 μm tunnel injection p-doped quantum dot excited state laser

Abstract

The measured characteristics of excited state lasing in tunnel injection p-doped InAs quantum dot lasers are reported. Excited state lasing at 1.22 m is ensured by a high-reflectivity facet coating which is designed to suppress ground state lasing in the devices. The saturation modal gain in the excited states is 56 cm -1 , which is a factor of 2.5 higher than that of the ground state. The small-signal modulation bandwidth for I = 4.5I th is 13.5 GHz and the differential gain is 1.1 10 -15 cm 2 .