Field-effect transistor self-electrooptic effect device: integrated photodiode, quantum well modulator and transistor

Abstract

The authors propose and demonstrate the integration of a photodiode, a quantum-confined Stark-effect quantum-well optical modulator, and a metal-semiconductor field-effect transistor (MESFET) to make a field-effect transistor self-electrooptic effect device. This integration allows optical inputs and outputs on the surface of a GaAs-integrated circuit chip, compatible with standard MESFET processing. To provide an illustration of feasibility, the authors demonstrate signal amplification with a single MESFET.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>