Publication | Closed Access
Mechanisms for intraband energy relaxation in semiconductor quantum dots: The role of electron-hole interactions
266
Citations
17
References
2000
Year
Intraband Energy RelaxationEngineeringColloidal NanocrystalsChemistrySemiconductor NanostructuresElectron-hole InteractionsNanoelectronicsQuantum DotsCharge Carrier TransportCompound SemiconductorPhysicsNanotechnologySemiconductor Quantum DotsPhysical ChemistrySemiconductor MaterialQuantum ChemistryNano ApplicationNanocrystalline MaterialNanomaterialsNatural SciencesPhonon EmissionApplied PhysicsCondensed Matter PhysicsElectron Relaxation Time
To evaluate the role of nonphonon energy relaxation mechanisms in quantum dots and in particular the role of electron-hole (e-h) interactions, we have studied femtosecond carrier dynamics in CdSe colloidal nanoparticles in which the e-h separation (coupling) is controlled using different types of surface ligands. In dots capped with hole accepting molecules, the e-h coupling is strongly reduced after the hole is transferred to a capping group. By re-exciting an electron within the conduction band at different stages of hole transfer and monitoring its relaxation back into the ground state, we observe a more than tenfold increase in the electron relaxation time (from 250 fs to 3 ps) after the completion of the hole transfer to the capping molecule. This strongly indicates that electron relaxation in quantum dots is dominated not by phonon emission but by the e-h energy transfer.
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