Electrolytic Growth and Dissolution of Oxide Layers on Silicon in Aqueous Solutions of Fluorides

Abstract

Abstract The growth and dissolution of oxide layers on silicon has been studied under illumination and in the dark by analyzing current transients at different voltages in solutions of NH 4 F of various concentrations at pH values between 1 and 4.5. When the oxidation rate of the silicon at high enough anodic bias and, for n‐type specimens, high enough illumination intensity exceeds the rate of oxide dissolution in the fluoride, the film grows until it has reached a thickness where the dissolution is rate‐determining for the net process. At higher voltages the current begins to oscillate. The data give some insight into the composition of the oxide layers and their electronic and ionic properties.