Spin-transfer effects in nanoscale magnetic tunnel junctions

Abstract

We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, <5Ωμm2, barriers. The current densities required for magnetic switching are similar to values for all-metallic spin-valve devices. In the tunnel junctions, spin-transfer-driven switching can occur at voltages that are high enough to quench the tunnel magnetoresistance, demonstrating that the current remains spin polarized at these voltages.