Applied Physics Letters · 2012 · 71 citations · 19 references
Materials ScienceMultiferroicsCofe2o4 Thin FilmsEngineeringMaterial AnalysisPhysicsFilm ThicknessAdditional Raman ModesOxide ElectronicsApplied PhysicsQuantum MaterialsCondensed Matter PhysicsThin FilmsFunctional MaterialsSolid-state PhysicThin Film Processing
Electronic structure and optical band gap of CoFe2O4 thin films grown on (001) oriented LaAlO3 have been investigated. Surprisingly, these films show additional Raman modes at room temperature as compared to a bulk spinel structure. The splitting of Raman modes is explained by considering the short-range ordering of Co and Fe cations in octahedral site of spinel structure. In addition, an expansion of band-gap is observed with the reduction of film thickness, which is explained by the quantum size effect and misfit dislocation. Such results provide interesting insights for the growth of spinel phases.
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