Applied Physics Letters · 1995 · 22 citations · 0 references
EngineeringElectrical EngineeringOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptical Properties Of SemiconductorsQuantum WellsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsCurrentsLeakageQuantum Well Laser DiodesQuantum Well LasersTemperature DependenceThreshold BehaviorWaveguide Lasers
The observed temperature dependence of threshold currents in InGaAs/GaAs quantum-well ridge-waveguide lasers is modeled. This method incorporates both experimental data and theoretical gain calculations. The results show that lateral leakage currents must be included in the ridge-waveguide laser models. Based on the same model, the temperature-dependent modulation characteristics for InGaAs/GaAs quantum-well ridge-waveguide lasers are also investigated.