Room‐temperature ferromagnetism in Cr‐doped GaN films grown by MOMBE on GaAs(111)A substrates

Abstract

c-axis-oriented Cr-doped hexagonal GaN films with Cr of 0.3, 1 and 5 at.% were epitaxially grown on GaAs(111)A substrates by metal organic molecular beam epitaxy (MOMBE) with metal Ga and dimethylhydrazine (DMHy) as a nitrogen source. Clear hysteresis loop was observed in magnetization versus magnetic filed (M–H) curves for Cr-doped GaN films, and the ferromagnetic behaviour was confirmed even at 350 K. The saturation magnetization per Cr atom is estimated to be approximately 1 Bohr magnetron at 300 K. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)