Threshold Energy for Atomic Displacement in Cadmium Telluride

Abstract

Abstract A study of the luminescence emission spectrum of cadmium telluride at 77 °K before and after bombardment with monoenergetic electrons in the energy range 100 to 400 keV has been made. Enhancement of the luminescence emission band at 1.13 μm after radiation damage of p‐type cadmium telluride permits the measurement of an energy threshold at 340 keV. This is an energy threshold for the production of primary damage in the crystal. An electron of 340 keV energy could transfer a maximum of 7.8 eV to a tellurium atom or 8.9 eV to a cadmium atom. The damage causing the enhancement of the 1.13 μm luminescence emission band is found to anneal completely in a single stage between 110 and 140 °K. The damage causing a decrease in the 0.89 μm luminescence emission band anneals partially (40%) in the same temperature range (110 to 140 °K). The remainder of the damage causing a decrease in the 0.89 μm luminescence emission band anneals in a continuous manner between 140 °K and room temperature.