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Inelastic scattering rate for electrons in thin aluminum films determined from the minimum frequency for microwave stimulation of superconductivity

26

Citations

8

References

1984

Year

Abstract

A new method for determination of the inelastic scattering rate for electrons in thin films is presented, using the minimum frequency for microwave enhancement of the critical pair-breaking current. Measurements on clean aluminum films with thickness between 144 and 4 nm yield excellent agreement with predictions of Abrahams et al. for electron-electron scattering.

References

YearCitations

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