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Inelastic scattering rate for electrons in thin aluminum films determined from the minimum frequency for microwave stimulation of superconductivity
26
Citations
8
References
1984
Year
Superconducting MaterialEngineeringElectron DiffractionThin Aluminum FilmsMicrowave StimulationElectron SpectroscopySuperconductivityMicrowave EnhancementComputational ElectromagneticsSuperconducting DevicesElectrical EngineeringPhysicsMicrowave MeasurementMicroelectronicsElectrical PropertyApplied PhysicsCondensed Matter PhysicsThin FilmsInelastic Scattering RateElectrical Insulation
A new method for determination of the inelastic scattering rate for electrons in thin films is presented, using the minimum frequency for microwave enhancement of the critical pair-breaking current. Measurements on clean aluminum films with thickness between 144 and 4 nm yield excellent agreement with predictions of Abrahams et al. for electron-electron scattering.
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