Publication | Closed Access
Growth with Surface Diffusion
661
Citations
11
References
1990
Year
Epitaxial GrowthEngineeringDiffusion ResistancePhysicsNatural SciencesCrystal Growth TechnologySurface ScienceNumerical SimulationApplied PhysicsSimple Growth ModelDiffusion ProcessTransport PhenomenaGrowth ModelsAnomalous DiffusionSurface DiffusionLangevin EquationMolecular Beam EpitaxyMultiscale Modeling
A simple growth model is investigated where particles are deposited onto a substrate randomly and subsequently relax into a position nearby where the binding is strongest. In space dimension d = 2 the surface roughness exponent and the dynamical exponent are ξ = 1.4 ± 0.1 and z = 3.8 ± 0.5. These values are larger than for previous models of sedimentation or ballistic deposition and are surprisingly close to the ones obtained from a linear generalized Langevin equation for growth with surface diffusion. A scaling relation 2ξ = z − d + 1 is proposed to be valid for a large class of growth models relevant for molecular beam epitaxy.
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