Single‐Crystalline p‐Type Zn₃As₂ Nanowires for Field‐Effect Transistors and Visible‐Light Photodetectors on Rigid and Flexible Substrates

Abstract

Abstract Zn 3 As 2 is an important p‐type semiconductor with the merit of high effective mobility. The synthesis of single‐crystalline Zn 3 As 2 nanowires (NWs) via a simple chemical vapor deposition method is reported. High‐performance single Zn 3 As 2 NW field‐effect transistors (FETs) on rigid SiO 2 /Si substrates and visible‐light photodetectors on rigid and flexible substrates are fabricated and studied. As‐fabricated single‐NW FETs exhibit typical p‐type transistor characteristics with the features of high mobility (305.5 cm 2 V −1 s −1 ) and a high I on / I off ratio (10 5 ). Single‐NW photodetectors on SiO 2 /Si substrate show good sensitivity to visible light. Using the contact printing process, large‐scale ordered Zn 3 As 2 NW arrays are successfully assembled on SiO 2 /Si substrate to prepare NW thin‐film transistors and photodetectors. The NW‐array photodetectors on rigid SiO 2 /Si substrate and flexible PET substrate exhibit enhanced optoelectronic performance compared with the single‐NW devices. The results reveal that the p‐type Zn 3 As 2 NWs have important applications in future electronic and optoelectronic devices.