Epitaxial growth of <i>p</i>-type ZnMgSSe

Abstract

N-doped p-type ZnMgSSe was grown by molecular beam epitaxy. Nitrogen was induced by electron cyclotron resonance plasma. The maximum net acceptor concentration (NA−ND) and the activation energy of the nitrogen acceptor (EN) depend on the band-gap energy of ZnMgSSe. With increasing band-gap energy, the maximum NA-ND is decreased and EN is increased. The maximum NA-ND and the EN of ZnMgSSe with a band-gap energy of 3.05 eV at 77 K are 2.5×1016 cm−3 and 140 meV, respectively.