p type doping of zinc oxide by arsenic ion implantation

Abstract

p type doping of polycrystalline ZnO thin films, by implantation of arsenic ions, is demonstrated. The approach consisted of carrying out the implantations at liquid-nitrogen temperature (∼−196°C), followed by a rapid in situ heating of the sample, at 560°C for 10min, and ex situ annealing at 900°C for 45min in flowing oxygen. p type conductivity with a hole concentration of 2.5×1013cm−2 was obtained using this approach, following implantation of 150keV 5×1014As∕cm2. A conventional room-temperature implantation of 1×1015As∕cm2, followed by the same ex situ annealing, resulted in n type conductivity with a carrier concentration of 1.7×1012cm−2.