Applied Physics Letters · 2015 · 38 citations · 27 references
Materials ScienceChemical EngineeringInorganic ElectronicsEngineeringBlfto Thin FilmsPlanar ElectrodesFerroelectric ApplicationOxide ElectronicsOxide SemiconductorsApplied PhysicsFilm Capacitor StructuresThin Film Process TechnologyThin FilmsFunctional MaterialsO3 Thin FilmsThin Film Processing
Doubly substituted [Bi0.9La0.1][Fe0.97Ta0.03]O3 (BLFTO) films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. The ferroelectric photovoltaic properties of ZnO:Al/BLFTO/Pt thin film capacitor structures were evaluated under white light illumination. The open circuit voltage and short circuit current density were observed to be ∼0.20 V and ∼1.35 mA/cm2, respectively. The band gap of the films was determined to be ∼2.66 eV, slightly less than that of pure BiFeO3 (2.67 eV). The PV properties of BLFTO thin films were also studied for various pairs of planar electrodes in different directions in polycrystalline thin films.
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Epitaxial BiFeO <sub>3</sub> Multiferroic Thin Film Heterostructures
Junling Wang, Jeffrey B. Neaton, Haimei Zheng et al. · Science · 2003 · 6.1K citations · Full text
Above-bandgap voltages from ferroelectric photovoltaic devices
So‐Young Yang, Jan Seidel, Steven J. Byrnes et al. · Nature Nanotechnology · 2010 · 1.8K citations
Electrical Engineering, Engineering, Ferroelectric Application +3