Spatially controlled crystal regrowth of ion-implanted silicon by laser irradiation

Abstract

We demonstrate the unique capability of a repetitively pulsed laser to ’’write’’ a monocrystalline pattern in ion-implanted amorphous silicon layers. Ion-channeling data, from the samples scanned with a focused beam of a Q-switched Nd : YAG laser, show a continuity of the single-crystal layer produced with spatially overlapping laser pulses, at 60–80 MW cm−2. Scattering yields indicate very high substitutionality of the implanted ions and an interdependence between the laser power density and the depth redistribution of the implants. Finally, similar recrystallization was obtained with a CO2 laser at 10.6 μm.