Publication | Open Access
Far-Infrared Active Media Based on Shallow Impurity State Transitions in Silicon
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1998
Year
Optical PumpingPhotonicsSpontaneous EmissionOptical MaterialsEngineeringSemiconductor TechnologyPhysicsInfrared SensorOptical PropertiesIntrinsic ImpurityApplied PhysicsShallow Impurity StatesSemiconductor MaterialSemiconductor Device FabricationSilicon On InsulatorOptoelectronicsImpurity TransitionsFar-infrared Active Media
Two mechanisms of the inverse population of shallow impurity states in silicon under optical pumping have been proposed and analyzed, using a procedure allowing to reduce the number of required matrix elements of transitions. The first mechanism is based on the resonance interaction of the 2p0 state in Si:Bi with optical phonons. The other one is based on the suppression of acoustic-phonon-assisted relaxation from the 2p0 state in Si:P due to the momentum conservation law. Spontaneous emission was registered from shallow donors in Si:P under photoionization by a CO2 laser. The dependence of the spontaneous emission intensity on the intensity of pumping radiation confirms the possibility of amplification on impurity transitions.