Resistance standard using quantization of the Hall resistance of GaAs-Al<i>x</i>Ga1−<i>x</i>As heterostructures

Abstract

Quantization of the Hall resistance of the two-dimensional electron gas in GaAs-AlxGa1−xAs heterostructures is observed at 4.2 K and at magnetic fields as low as 4.2 T. This demonstrates its practical use as a primary resistance standard.