Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells

Abstract

Fourier-transformed photoreflectance and photoluminescence have been used to study the optical transitions in type II quantum wells (QWs) ranging up to almost 5 µm. High signal-to-noise ratio spectral features resulting from fundamental and excited state transitions have been detected for molecular beam epitaxially grown GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb "W"-shaped QW structures designed for laser-based gas sensing applications in the mid-infrared. The spectral features' dependence on arsenic pressure during growth process and on InAs confining-layer thickness could be followed unambiguously at room temperature.