Fine structure splitting of isoelectronic bound excitons in nitrogen-doped GaAs

Abstract

We have studied the fine structure polarization splitting of exciton emission lines related to isoelectronic centers in an nitrogen-doped GaAs. The nitrogen doping has been performed in atomically controlled way using the $(3\ifmmode\times\else\texttimes\fi{}3)$ nitrogen stable surface of GaAs(001), which forms a series of distinct, strong, narrow bandwidth luminescence lines. The localized bound excitons have been found to consist of four signals, which can be selected by linear polarization. Magnetic-field-induced change in the splitting shows a quadratic dependence of the bright exciton splitting owing to the in-plane Zeeman interaction. Our calculations of the optical selection characteristics considering both the $J\text{\ensuremath{-}}J$ coupling and local-field effects demonstrate the polarization splitting depending on the symmetry of the isoelectronic center.