Experimental study of the double kink formation kinetics and kink mobility on the dislocation line in Si single crystals

Abstract

An experimental study is made of the mobility of individual 60° dislocations in Si single crystals under the action of load pulse sequence with the duration of individual pulses being comparable with the time required for the dislocations to pass between adjacent valleys of the potential relief. An essential influence is observed of the parameters of the load pulse sequence (pulse duration (ti) and pulse separation (tp)) on the mean dislocation displacements which decrease with rising tp and decreasing ti from the values obtained during static loading down to zero at certain critical values (ti)cr and (tp)cr. A model is proposed which allows to estimate the main characteristics of the processes of the formation of double kinks and their spreading along the dislocation line using the measured critical parameters. [Russian Text Ignored.]