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Infrared photovoltaic detectors utilizing Hg1−<i>x</i>Mn<i>x</i>Te and Hg1−<i>x</i>−<i>y</i>Cd<i>x</i>Mn<i>y</i>Te alloys
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1986
Year
EngineeringInfrared Photovoltaic DetectorsOptoelectronic DevicesPhotovoltaicsSemiconductor DeviceSemiconductorsIi-vi SemiconductorElectronic DevicesQuantum MaterialsDifferential ResistivityInfrared OpticMaterials ScienceSemiconductor TechnologyElectrical EngineeringOptoelectronic MaterialsSemiconductor MaterialEnergy Band GapsP–n JunctionsInfrared SensorApplied PhysicsCondensed Matter PhysicsOptoelectronicsSolar Cell Materials
p–n junctions in ternary Hg1−xMnxTe and quaternary Hg1−x−yCdxMnyTe semimagnetic semiconducting alloys with energy band gaps from 100 to 770 meV were produced by the Hg diffusion method. Current–voltage curves, differential resistivity, and spectral characteristics were measured in the temperature range from 4.2 to 300 K. Material and technological parameters on the electric and photoelectric properties of p–n junctions were analyzed.