Density-dependent exciton radiative lifetimes in GaAs quantum wells

Abstract

Resonant photoexcitation of a predominantly homogeneously broadened exciton line in a GaAs quantum well results in a nonexponential time-resolved photoluminescence decay transient due to the decrease in the exciton-exciton scattering contribution to the homogeneous linewidth, ${\mathrm{\ensuremath{\Gamma}}}_{\mathit{h}}$, as the exciton population decays. This result confirms the theoretically predicted relationship between the exciton radiative recombination lifetime and the homogenous linewidth (and coherence area) of the exciton state.