DNA Interlayers Enhance Charge Injection in Organic Field‐Effect Transistors

Abstract

By inserting DNA interlayers beneath the Au contact, the contact resistance of PC(70) BM field-effect transistorss is reduced by approximately 30 times at a gate bias of 20 V. The electron and hole mobilities of ambipolar diketopyrrolopyrrole transistors are increased by one order of magnitude with a reduction of the threshold voltage from 12 to 6.5 V.