Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

V. Cimalla, J. Pezoldt, O. Ambacher · Journal of Physics D Applied Physics · 2007 · 386 citations

Engineering, Materials Engineering, Materials Science +17

GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

S. J. Pearton, B. S. Kang, Suku Kim et al. · Journal of Physics Condensed Matter · 2004 · 300 citations

Engineering, Electrical Engineering, Materials Science +17

An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs

Rashmi Rashmi, Abhinav Kranti, Subhasis Haldar et al. · Solid-State Electronics · 2002 · 174 citations

Engineering, Electrical Engineering, Materials Science +14

Piezoelectric GaN sensor structures

Tom Zimmermann, Martin Neuburger, P. Benkart et al. · IEEE Electron Device Letters · 2006 · 126 citations

Engineering, Materials Engineering, Materials Science +17

Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

B. S. Kang, S. Kim, F. Ren et al. · Applied Physics Letters · 2004 · 117 citations

Engineering, Electrical Engineering, Materials Science +17