Publication | Closed Access
Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor
35
Citations
10
References
2013
Year
Wide-bandgap SemiconductorBias ConditionsElectrical EngineeringEngineeringPressure SensorsApplied PhysicsAluminum Gallium NitrideGan Power DeviceMicroelectronicsSemiconductor Device
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