Extreme environment temperature sensor based on silicon carbide Schottky Diode

Abstract

A high performance temperature sensor based silicon carbide power Schottky Barrier Diodes are developed for high temperature and harsh environment applications. The linear temperature dependence of the forward voltage and the exponential variation of the reverse voltage with the temperature are used as thermal sensing. The sensitivity is in range of 1.6 - 2.1 mV/degC from forward bias and about 5 uA/degC based on reverse characteristics.