Publication | Closed Access
Hole burning, Stark effect, and data storage
76
Citations
8
References
1985
Year
Storage PerformanceEngineeringOptoelectronic DevicesData StorageElectronic DevicesOptical PropertiesHole BurningElectric FieldData ManagementPhotonicsElectrical EngineeringPhysicsCosmic RayPhotoelectric MeasurementMultiple Hole BurningOptical MemoryApplied PhysicsOptoelectronicsOptical Devices
This paper investigates the effects of an external electric field on hole-burning processes. The photoprocess for hole burning involves the transformation of chlorin (dihydroporphyrin) into its phototautomer. Two-dimensional representations (voltage/frequency) of the transmittance and the change in optical density are illustrated for single and multiple hole burning. At 4.2 K a hole width of 25 kV/cm in electric field scanning range and of 3 GHz (0.1 cm−1) in optical frequency was achieved. The increase in the data storage capacity for optical memory devices offered by the electrical field parameter is discussed.
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