Patterned buried oxide layers under a single MOSFET to improve the device performance

Abstract

A novel quasi-silicon-on-insulator (Q-SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) has been successfully fabricated, where the drain and source regions were positioned on the patterned buried oxide (BOX) layers while the channel region was left connected to the substrate. The high-quality BOX layers patterned under a single MOSFET were formed by the masked separation by implantation of oxygen technique. The electrical and thermal properties of such a novel Q-SOI device were investigated and the results demonstrated that this Q-SOI device has improved performances over the SOI counterpart because of suppression of the floating-body and self-heating effects.