Li-doped ZnSe epitaxial layers by ion implantation

Abstract

Li+ ions were implanted into undoped high crystalline quality ZnSe epilayers grown by metalorganic vapor phase epitaxy. Thermal annealing after ion implantation was performed between 451 and 757 °C. The total photoluminescence intensity (measured at 77 K) of implanted layers before annealing was two orders of magnitude less than that of an as-grown one because of the Li+ ion damage. As the annealing temperature was increased, however, the damage was reduced and the photoluminescence intensities of two main peaks (band-edge emission and strong free to acceptor transition emission) became intense without generating deep centers. At 4.2 K, the only emission observed was associated with acceptor bound exciton and donor acceptor pair recombination in the near-band-edge region.