Journal of Applied Physics · 1965 · 918 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceOpticsSemiconductor DevicesSurface ScienceDefects In Electronic MaterialsLaser Material ProcessingLaser PhysicsRadiation Damage In MaterialsSemiconductor DefectsSemiconductor LasersCatastrophic Optical DamageLaser Surface TreatmentLaser-induced BreakdownLasersRadiation Damage EffectsSurface DamageThermal Damage
Semiconductor surface damage, produced by a focused beam of ruby laser light, consisted of regular patterns of cracks and a system of parallel straight lines. The system of grooves (spacing of about 0.0001 cm) can be explained on the basis of diffraction effects at the focus of a lens. The regular crack patterns were related to the cleavage habits of the semiconductors by x-ray analysis. (Author)
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Optical Properties of Semiconductors
H. R. Philipp, Hannelore Ehrenreich · Physical Review · 1963 · 2.1K citations
Semiconducting III–V Compounds
C. Hilshum, Arthur Rose-Innes, Leonard R. Weisberg · Journal of The Electrochemical Society · 1963 · 228 citations
Modulation of the Reflectivity of Semiconductors
Milton Birnbaum · Journal of Applied Physics · 1965 · 34 citations · Full text