Microstructured silicon photodetector

Abstract

Photodetectors fabricated on microstructured silicon are reported. The photodetectors exhibited high photoresponse; at 3V bias, the responsivities were 92A∕W at 850nm and 119A∕W at 960nm. At wavelengths longer than 1.1μm, the photodetectors still showed strong photoresponse. A generation-recombination gain mechanism has been proposed to explain the photoresponse of these photodiodes. From measurements of the noise current density, the calculated gain was approximately 1200 at 3V bias.