Improvement of Ge self-organized quantum dots by use of Sb surfactant

Abstract

A Sb-mediated growth technique is developed to deposit Ge quantum dots (QDs) of small size, high density, and free of dislocations. These QDs were grown at low growth temperature by molecular beam epitaxy. The photoluminescence and absorption properties of these Ge QDs suggest an indirect-to-direct conversion, which is in good agreement with a theoretical calculation.