Self-frequency-doubled KTiOAsO_4 Raman laser emitting at 573 nm

Abstract

A self-frequency-doubled KTiOAsO4 (KTA) Raman laser is realized in a diode-end-pumped acousto-optically Q-switched intracavity Raman laser configuration. A 30-mm-long x-cut KTA crystal is used as the Raman medium, and its 671 cm(-1) Raman mode is employed to finish the conversion from 1064 nm fundamental laser to 1146 nm Raman laser. Self-frequency doubling of the Raman laser is accomplished in the same KTA crystal, and a 573 nm yellow laser is obtained. With an incident diode power of 10.9 W and a pulse repetition rate of 20.8 kHz, a yellow-laser power of 0.82 W is obtained. The conversion efficiency from diode power to yellow-laser power is 7.5%.